LONDON – Semiconductor manufacturing materials vendors Soitec SA and Sumitomo Electric Industries Ltd. have announced that they have demonstrated four- and six-inch diameter engineered gallium nitride (GaN) wafer substrates and...

Yale University has developed techniques to release nitride semiconductor layers and transfer them to other substrates, allowing vertical current-flow light-emitting diodes (LEDs) [Yu...

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Researchers in Korea have used p-type gallium nitride (p-GaN) as a back-barrier for recessed-gate high-electron-mobility transistors (HEMTs) [Dong-Seok Kim et al, Jpn. J. Appl....

Researchers based in Korea have used double dielectric layers on nitride semiconductor light-emitting diodes (LEDs) to boost output power by up to 25% through...

University of Notre Dame has realized the first strained gallium nitride (GaN) quantum well (QW) transistors with unstrained aluminium nitride (AlN) barriers [Guowang...

An interesting announcement from Meaglow Ltd of Thunder Bay, Ontario, Canada. What are your thoughts on the subject?

Researchers in the USA and Korea have grown heterojunction solar cells with lattice-matched indium gallium arsenide antimonide nitride (InGaAsSbN) base layers using metal-organic chemical...

Germany’s RWTH Aachen University and Fraunhofer IAF (Institute for Applied Solid State Physics) have applied nitride-semiconductor polarization...

Hong Kong University of Science and Technology (HKUST) has produced high-performance gallium indium arsenide (GaInAs) metamorphic high-electron-mobility transistors...

NTT Basic Research Laboratories in Japan has demonstrated “for the first time” RF power operation of aluminum gallium nitride (AlGaN) barrier...

The researchers Rositza Yakimova, Mikael Syväjärvi and Tihomir Iakimov of Sweden’s Linköping University have founded the spin-off Graphensic AB...

Sophia University in Japan has produced 1.46μm infrared light-emitting diodes (LEDs) based on indium gallium nitride (InGaN) semiconductors [Katsumi Kishino et al, Appl. Phys. Express, vol5,...

Lund University in Sweden has been developing a low-impact self-aligned process to create metal-oxide semiconductor field-effect transistors (MOSFETs)...

Lake Shore Cryotronics Inc of Westerville OH, USA, which makes scientific sensors, instruments and systems for precise measurement and control, has launched the new Model CRX-VF...

Massachusetts Institute of Technology (MIT) has applied tri-gate technology to create new normally-off nitride semiconductor transistors, increasing on/off...

National Chiao Tung University researchers in Taiwan have improved nitride semiconductor light-emitting diode (LED) performance by growing the structures on silicon...

In collaboration with power conversion and magnetic product maker Tamura Co Ltd and optoelectronics engineering firm Koha Co Ltd, Japan’s National Institute of Information and...

Taiwan researchers have been using silicon dioxide (SiO 2) honeycomb structures to increase the performance of nitride semiconductor solar cells

Researchers in Australia and Italy have demonstrated all-silicon light-emitting diodes (LEDs) using p-type silicon nanocrystals produced by material technology that has...